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AM29F400AB

4Megabit(524,288x8-Bit/262,144x16-Bit)CMOS5.0Volt-only,SectorEraseFlashMemory

GENERALDESCRIPTION TheAm29F400Aisa4Mbit,5.0Volt-onlyFlashmemoryorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.The4Mbitsofdataisdividedinto11sectorsofone16Kbyte,two8Kbyte,one32Kbyte,andseven64Kbytes,forflexibleerasecapability.The8bits

AMDAdvanced Micro Devices, Inc.

超威半导体美国超威半导体公司

AM29F400AT

4Megabit(524,288x8-Bit/262,144x16-Bit)CMOS5.0Volt-only,SectorEraseFlashMemory

GENERALDESCRIPTION TheAm29F400Aisa4Mbit,5.0Volt-onlyFlashmemoryorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.The4Mbitsofdataisdividedinto11sectorsofone16Kbyte,two8Kbyte,one32Kbyte,andseven64Kbytes,forflexibleerasecapability.The8bits

AMDAdvanced Micro Devices, Inc.

超威半导体美国超威半导体公司

AM29F400B

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS5.0Volt-onlyBootSectorFlashMemory

AMDAdvanced Micro Devices, Inc.

超威半导体美国超威半导体公司

AM29F400B

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS5.0Volt-onlyBootSectorFlashMemory

AMDAdvanced Micro Devices, Inc.

超威半导体美国超威半导体公司

AM29F400B

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS5.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29F400Bisa4Mbit,5.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. Thedeviceisofferedin44-pinSOand48-pinTSOPpackages.ThedeviceisalsoavailableinKnownGoodDie(KGD)form.Formoreinformation,refertopublicationnumber21258

AMDAdvanced Micro Devices, Inc.

超威半导体美国超威半导体公司

AM29F400T

AM29F400T

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

BM29F400B

4MEGABIT(512Kx8/256Kx16)5VOLTSECTORERASECMOSFLASHMEMORY

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

BM29F400T

4MEGABIT(512Kx8/256Kx16)5VOLTSECTORERASECMOSFLASHMEMORY

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

HY29F400

4Megabit(512Kx8/256Kx16)5Volt-onlyFlashMemory

GENERALDESCRIPTION TheHY29F400isa4Megabit,5voltonlyCMOSFlashmemoryorganizedas524,288(512K)bytesor262,144(256K)words.Thedeviceisofferedinindustry-standard44-pinPSOPand48-pinTSOPpackages. KEYFEATURES ■5VoltRead,Program,andErase –Minimizessystem-level

HynixHynix Semiconductor

SK海力士海力士半导体

HY29F400A

4Megabit(512Kx8/256Kx16)5Volt-onlyFlashMemory

GENERALDESCRIPTION TheHY29F400Aisa4Megabit,5voltonlyCMOSFlashmemoryorganizedas524,288(512K)bytesor262,144(256K)words.Thedeviceisofferedinindustry-standard44-pinPSOPand48-pinTSOPpackages. KEYFEATURES ■5VoltRead,Program,andErase –Minimizessystem-leve

HynixHynix Semiconductor

SK海力士海力士半导体

M29F400

4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory

DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29F400

4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory

Description TheM29F400Bisa4Mbit(512Kbx8or256Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29F400B

4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory

DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29F400BB

4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory

Description TheM29F400Bisa4Mbit(512Kbx8or256Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29F400BB

4Mbit(512Kbx8or256Kbx16,BootBlock)singlesupplyFlashmemory

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29F400BT

4Mbit(512Kbx8or256Kbx16,BootBlock)singlesupplyFlashmemory

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29F400BT

4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory

Description TheM29F400Bisa4Mbit(512Kbx8or256Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29F400T

4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory

DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

MBM29F400TC

4M(512KX8/256KX16)BIT

■GENERALDESCRIPTION TheMBM29F400TC/BCisa4M-bit,5.0V-onlyFlashmemoryorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheMBM29F400TC/BCisofferedina48-pinTSOPand44-pinSOPpackages.Thisdeviceisdesignedtobeprogrammedin-systemwiththestandardsystem5

FujitsuFujitsū Kabushiki-gaisha

富士通富士通株式会社

MBM29F400TC

FLASHMEMORYCMOS4M(512Kx8/256Kx16)BIT

■DESCRIPTION TheMBM29F400TC/BCisa4M-bit,5.0V-onlyFlashmemoryorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheMBM29F400TC/BCisofferedina48-pinTSOPand44-pinSOPpackages.Thisdeviceisdesignedtobeprogrammedin-systemwiththestandardsystem5.0VV

spansionSPANSION

飞索飞索半导体

供应商型号品牌批号封装库存备注价格
HYUNDAI
22+
TSOP
3900
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
HY
0523+
TSOP48
197
全新原装进口自己库存优势
询价
HY
TSSOP
1000
正品原装--自家现货-实单可谈
询价
HY
17+
TSOP48
9988
只做原装进口,自己库存
询价
HY
23+
TSSOP
65480
询价
HYNIX
23+
TSOP
4500
全新原装、诚信经营、公司现货销售
询价
SKHYNIX/海力士
TSOP48
12000
原装现货,长期供应,终端账期支持
询价
HYNIX
NA
8560
一级代理 原装正品假一罚十价格优势长期供货
询价
HYNIX/海力士
02+
TSOP48
2680
就找我吧!--邀您体验愉快问购元件!
询价
hyn
dc00
原厂封装
220
INSTOCK:17/tube/so44
询价
更多HY29F400ABT-SS供应商 更新时间2024-6-10 11:10:00