HY27UG088G5M中文资料8Gbit (1Gx8bit) NAND Flash数据手册SK hynix规格书

描述 Description

SUMMARY DESCRIPTION
The HYNIX HY27UG088G(5/D)M series is a 1Gx8bit with spare 32Mx8 bit capacity. The device is offered in 3.3V Vcc Power Supply.
Its NAND cell provides the most cost-effective solution for the solid state mass storage market.
The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.
The device contains 8192 blocks, composed by 64 pages consisting in two NAND structures of 32 series connected Flash cells.
A program operation allows to write the 2112-byte page in typical 200us and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device) block.
Data in the page mode can be read out at 30ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. This interface allows a reduced pin count and easy migration towards dif ferent densities, without any rearrangement of footprint.
The cache program feature allows the data insertion in the cache register while the data register is copied into the flash array. This pipelined program operation improves the program throughput when long files are written inside the memory.
A cache read feature is also implemented. This feature allows to dramatically improve the read throughput when con secutive pages have to be streamed out.
This device includes also extra features like OTP/Unique ID area, Read ID2 extension.
The HYNIX HY27UG088G(5/D)M series is available in 48 - TSOP1 12 x 20 mm, 52-ULGA 12 x 17 mm.FEATURES SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
   - Cost effective solutions for mass storage applicationsNAND INTERFACE
   - x8 width.
   - Multiplexed Address/ Data
   - Pinout compatibility for all densitiesSUPPLY VOLTAGE
   - 3.3V device: VCC = 2.7 to 3.6V : HY27UG088G(5/D)MMemory Cell Array
   = (2K+ 64) Bytes x 64 Pages x 8,192 BlocksPAGE SIZE
   - x8 device : (2K + 64 spare) Bytes
      : HY27UG088G(5/D)MBLOCK SIZE
   - x8 device: (128K + 4K spare) BytesPAGE READ / PROGRAM
   - Random access: 25us (max.)
   - Sequential access: 30ns (min.)
   - Page program time: 200us (typ.)COPY BACK PROGRAM MODE
   - Fast page copy without external bufferingCACHE PROGRAM MODE
   - Internal Cache Register to improve the program throughputFAST BLOCK ERASE
   - Block erase time: 2ms (Typ.)STATUS REGISTER
ELECTRONIC SIGNATURE
   - 1st cycle: Manufacturer Code
   - 2nd cycle: Device CodeCHIP ENABLE DONT CARE
   - Simple interface with microcontrollerSERIAL NUMBER OPTION
HARDWARE DATA PROTECTION
   - Program/Erase locked during Power transitions
  
DATA INTEGRITY
   - 100,000 Program/Erase cycles (with 1bit/512byte ECC)
   - 10 years Data RetentionPACKAGE
   - HY27UG088G5M-T(P)
      : 48-Pin TSOP1 (12 x 20 x 1.2 mm)
      - HY27UG088G5M-T (Lead)
      - HY27UG088G5M-TP (Lead Free)
   - HY27UG088GDM-UP
      :52- ULGA (12 x 17 x 0.65 mm)
      - HY27UG088GDM-DP (Lead Free)