HY27UF084G2M-UP数据手册SK hynix中文资料规格书

描述 Description

SUMMARY DESCRIPTION
The HYNIX HY27UF084G2M series is a 512Mx8bit with spare 16Mx8 bit capacity. The device is offered in 3.3V Vcc Power Supply.
Its NAND cell provides the most cost-effective solution for the solid state mass storage market.
The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.
The device contains 4096 blocks, composed by 64 pages consisting in two NAND structures of 32 series connected Flash cells.
A program operation allows to write the 2112-byte page in typical 200us and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device) block.
Data in the page mode can be read out at 30ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. This interface allows a reduced pin count and easy migration towards different densities, without any rearrangement of footprint.FEATURES SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
   - Cost effective solutions for mass storage applications
NAND INTERFACE
   - x8 width.
   - Multiplexed Address/ Data
   - Pinout compatibility for all densities
SUPPLY VOLTAGE
   - 3.3V device: VCC = 2.7 to 3.6V : HY27UF084G2M
Memory Cell Array
   = (2K+ 64) Bytes x 64 Pages x 4,096 Blocks
PAGE SIZE
   - x8 device : (2K + 64 spare) Bytes
      : HY27UF084G2M
BLOCK SIZE
   - x8 device: (128K + 4K spare) Bytes
PAGE READ / PROGRAM
   - Random access: 25us (max.)
   - Sequential access: 30ns (min.)
   - Page program time: 200us (typ.)
COPY BACK PROGRAM MODE
   - Fast page copy without external buffering
CACHE PROGRAM MODE
   - Internal Cache Register to improve the program throughput
FAST BLOCK ERASE
   - Block erase time: 2ms (Typ.)
STATUS REGISTER
ELECTRONIC SIGNATURE
   - 1st cycle : Manufacturer Code
   - 2nd cycle: Device Code
CHIP ENABLE DONT CARE
   - Simple interface with microcontroller
SERIAL NUMBER OPTION
HARDWARE DATA PROTECTION
   - Program/Erase locked during Power transitions
DATA INTEGRITY
   - 100,000 Program/Erase cycles (with 1bit/512byte ECC)
   - 10 years Data Retention
PACKAGE
   - HY27UF084G2M-T(P)
      : 48-Pin TSOP1 (12 x 20 x 1.2 mm)
      - HY27UF084G2M-T (Lead)
      - HY27UF084G2M-TP (Lead Free)
   - HY27UF084G2M-UP
      : 52-ULGA (12 x 17 x 0.65 mm)
      - HY27UF084G2M-UP (Lead Free)