HY27UF162G2B中文资料2Gb NAND FLASH HY27UF(08/16)2G2B数据手册SK hynix规格书

描述 Description

FEATURES SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
- Cost effective solutions for mass storage applicationsMULTIPLANE ARCHITECTURE
- Array is split into two independent planes. Parallel Operations on both planes are available, halving
Program and erase time.NAND INTERFACE
- x8/x16 bus width.
- Address/ Data Multiplexing
- Pinout compatiblity for all densitiesSUPPLY VOLTAGE
- 3.3V device : Vcc = 2.7 V ~3.6 VMEMORY CELL ARRAY
- x8 : (2K + 64) bytes x 64 pages x 2048 blocks
- x16 : (1K + 32) words x 64 pages x 2048 blocksPAGE SIZE
- (2K + 64 spare) Bytes
- (1K + 32 spare) WordsBLOCK SIZE
- (128K + 4Kspare) Bytes
- (64K + 2Kspare) WordsPAGE READ / PROGRAM
- Random access : 25us (max.)
- Sequential access : 25ns (min.)
- Page program time : 200us (typ.)
- Multi-page program time (2 pages) : 200us (typ.)COPY BACK PROGRAM
- Automatic block download without latency timeFAST BLOCK ERASE
- Block erase time: 1.5ms (typ.)
- Multi-block erase time (2 blocks) : 1.5ms (typ.)CACHE READ
- Internal (2048 + 64) Byte buffer to improve the read throughtput.