丝印：HY1403；Package：TO-251-3S；N-Channel Enhancement Mode MOSFET

文件：1.53889 Mbytes 页数：12 Pages

HUAYI

华羿微电

Low Voltage Reference

A precision band–gap voltage reference designed for critical instrumentation and D/A converter applications. This unit is designed to work with D/A converters, up to 12 bits in accuracy, or as a reference for power supply applications. • Output Voltage: 2.5 V ±
25 mV • Input Voltage Range: 4.5 V

文件：127.99 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

LOW NOISE GaAs FET?

DESCRIPTION The MGF1403B is a low-noise GaAs FET with an N-channel Schottky gate, which is designed for use in S to Ku band amplifiers and oscillators. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits. FEATUR

文件：166.1 Kbytes 页数：4 Pages

MITSUBISHI

三菱电机

FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE

FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE

文件：232.12 Kbytes 页数：6 Pages

MITSUBISHI

三菱电机