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HX6408KQNM中文资料霍尼韦尔数据手册PDF规格书
HX6408KQNM规格书详情
The 512K x 8 Radiation Hardened Static RAM is a high performance 524,288 word x 8-bit static random access memory with optional industry-standard functionality. It is fabricated with Honeywell’s radiation hardened Silicon On Insulator (SOI) technology, and is designed for use in low voltage systems operating in radiation environments. The RAM operates over the full military temperature range and requires only a single 3.3 V ± 0.3V power supply. Power consumption is typically
FEATURES
◾ Fabricated with RICMOS™ V Silicon On Insulator (SOI)
◾ 0.35 mm Process (Leff = 0.28 µm)
◾ Total Dose ≥ 3x105 and 1X106 rad(SiO2)
◾ Neutron ≥1x1014 cm-2
◾ Dynamic and Static Transient Upset ≥1x1010 rad(Si)/s (3.3 V)
◾ Dose Rate Survivability ≥1x1012 rad(Si)/s
◾ Soft Error Rate ≤1x10-10 Upsets/bit-day (3.3 V)
◾ No Latchup
◾ Read/Write Cycle Times ≤20 ns, (3.3 V), -55 to 125°C
◾ Typical Operating Power (3.3 V)
<14 mW @ 1MHz Read
<30 mW @ 1MHz Write
<5 mW Standby mode
◾ Asynchronous Operation
◾ CMOS Compatible I/O
◾ Single Power Supply, 3.3 V ± 0.3 V
◾ Operating Range is -55°C to +125°C
◾ 36-Lead Flat Pack Package
◾ Optional Low Power Sleep Mode
产品属性
- 型号:
HX6408KQNM
- 制造商:
HONEYWELL
- 制造商全称:
Honeywell Solid State Electronics Center
- 功能描述:
512k x 8 STATIC RAM
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
HUAXIN(华芯) |
23+ |
SOT23 |
6000 |
诚信服务,绝对原装原盘 |
询价 | ||
HONYWELL |
23+ |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
EXPLORE |
2021+ |
QFP |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
HIMOX/EXPLORE |
23+ |
QFP100 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
PULSE |
2021+ |
DIP/SOP |
16500 |
十年专营原装现货,假一赔十 |
询价 | ||
HUAXIN(华芯) |
2021+ |
TO-92S |
1414 |
询价 | |||
HIMAX/奇景光电 |
24+23+ |
QFP100 |
12580 |
16年现货库存供应商终端BOM表可配单提供样品 |
询价 | ||
HONYWELL |
18+ |
原厂原装假一赔十 |
18 |
原厂很远现货很近,找现货选星佑电子,原厂原装假一赔 |
询价 | ||
HONYWELL |
2022+ |
5 |
只做原装,价格优惠,长期供货。 |
询价 | |||
HONYWELL |
24+ |
N/A |
90000 |
原厂正规渠道现货、保证原装正品价格合理 |
询价 |