HX6228TBNT中文资料霍尼韦尔数据手册PDF规格书

GENERAL DESCRIPTION

The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in radiation environ ments. The RAM operates over the full military temperature range and requires only a single 5 V ± 10 power supply. The RAM is wire bond programmable for either TTL or CMOS compatible I/O. Power consumption is typically less than 25 mW/MHz in operation, and less than 5 mW in the low power disabled mode. The RAM read operation is fully asynchronous, with an associated typical access time of 15 ns at 5V.

FEATURES

RADIATION

• Fabricated with RICMOS™ IV Silicon on Insulator (SOI)

0.7 µm Process (Leff = 0.55 µm)

• Total Dose Hardness through 1x106 rad(SiO2)

• Neutron Hardness through 1x1014 cm-2

• Dynamic and Static Transient Upset Hardness

through 1x1011 rad (Si)/s

• Dose Rate Survivability through <1x1012 rad(Si)/s

• Soft Error Rate of <1x10-10 upsets/bit-day in

Geosynchronous Orbit

• No Latchup

OTHER

• Read/Write Cycle Times

≤ 16 ns (Typical)

≤ 25 ns (-55 to 125°C)

• Typical Operating Power <25 mW/MHz

• Asynchronous Operation

• CMOS or TTL Compatible I/O

• Single 5 V ± 10 Power Supply

• Packaging Options

- 32-Lead Flat Pack (0.820 in. x 0.600 in.)

- 40-Lead Flat Pack (0.775 in. x 0.710 in.)