L-Band GaAs Power FET

Description The HWF1682RA is a high power GaAs MESFET designed for various RF and Microwave applications. It is presently offered in a low cost, surface-mountable ceramic package. Features • High Output Power: P1dB=37 dBm (typ.) • High Gain: GL=11.5 dB (typ.) • High Efficiency: PAE =45 (typ.)

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HW

汉威光电

L-Band GaAs Power FET

文件：109.97 Kbytes 页数：3 Pages

HW

汉威光电

L-Band Power FET Non-Via Hole Chip

Hexawave

汉威电子

OPIC Light Detector for X40 Speed CD-ROM Drive

General Description Sharps IS1682 is OPIC light detectors which are used for pick-up in X40 speed CD-ROM drive. They improve noise resistance characteristics and enable to read low reflective CD-RW due to built-in RF amp. Features (1) High speed response(Response frequency: MIN. 45MHz) (Best su

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SHARPSharp Corporation

夏普

4 Amp Over-Voltage Protection IC with Sense Output

Features • Wide Input voltage range: 2.3V to 28V • Up to 4A Continuous current capability • Integrated 38mΩ (typ) N-Channel MOSFET • Wide Over-Voltage threshold range  Fixed internal: 9.98V  Adjustable: 4V to 22V • Fast OVP response time: 0.1μs (typ.) • Microphone Mode for audio signal

文件：436.99 Kbytes 页数：12 Pages

KINETIC

芯凯电子

4 Amp Over-Voltage Protection IC with Sense Output

Features • Wide Input voltage range: 2.3V to 28V • Up to 4A Continuous current capability • Integrated 38mΩ (typ) N-Channel MOSFET • Wide Over-Voltage threshold range  Fixed internal: 9.98V  Adjustable: 4V to 22V • Fast OVP response time: 0.1μs (typ.) • Microphone Mode for audio signal

文件：436.99 Kbytes 页数：12 Pages

KINETIC

芯凯电子