IRF151

HighPower,HighSpeedApplications

DESCRIPTION •DrainCurrentID=40A@TC=25℃ •DrainSourceVoltage-:VDSS=60V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=0.055Ω(Max) •HighPower,HighSpeedApplications APPLICATIONS •Switchingpowersupplies •UPS •Motorcontrols •Highenergypulsecircuits.

IRF151

DUALMOSFETDRIVER

•DualCircuitsCapableofDriving High-CapacitanceLoadsatHighSpeeds •OutputSupplyVoltageRangeupto24V •LowStandbyPowerDissipation description TheSN75372isadualNANDgateinterface circuitdesignedtodrivepowerMOSFETsfrom TTLinputs.Itprovideshighcurrentandvol

IRF151R

AVALANCHEENERGYRATEDN-CHANNELPOWERMOSFETS

IRFP151

HIGHVOLTAGEPOWERMOSFETDIE

FEATURES: ●Fastswitchingtimes ●LOWRDS(on)HDMOS™process ●Ruggedpolyslllcongatecellstructure ●Excellenthighvoltagestability ●Lowinputcapacitance ●Improvedhightemperaturereliability APPLICATIONS ●Switchingpowersupplies ●Motorcontrols ●AudioAmplifiers ●Inver

IRFP151R

iscN-ChannelMOSFETTransistor

IRFS151

iscN-ChannelMOSFETTransistor

IRFS151

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=27.5A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=55mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

IRU151

RobustRISC-basedDIN-railFanlessEmbeddedSystemwithi.MX6ULProcessor

ITE151

DCElectronicLoads

J151

Switchingcapacityupto20A;smallsizeandlightweight