Controlled avalanche characteristic combined Low forward voltage drop

文件：284.56 Kbytes 页数：8 Pages

LRC

乐山无线电

Controlled avalanche characteristic combined

文件：506.43 Kbytes 页数：8 Pages

LEIDITECH

雷卯电子

Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator

Features • Low forward resistance. (rf = 5.5 max) • MPAK package is suitable for high density surface mounting and high speed assembly.

文件：28.41 Kbytes 页数：6 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator

Features • Low forward resistance. (rf = 5.5Ω max) • MPAK package is suitable for high density surface mounting and high speed assembly.

文件：68.07 Kbytes 页数：5 Pages

RENESAS

瑞萨

Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator

Features • Low forward resistance. (rf = 5.5 max) • MPAK package is suitable for high density surface mounting and high speed assembly.

文件：28.41 Kbytes 页数：6 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator

Features • Low forward resistance. (rf = 5.5 max) • MPAK package is suitable for high density surface mounting and high speed assembly.

文件：28.4 Kbytes 页数：6 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator

Features • Low forward resistance. (rf = 5.5 Ω max) • MPAK package is suitable for high density surface mounting and high speed assembly.

文件：67.49 Kbytes 页数：5 Pages

RENESAS

瑞萨

Silicon Epitaxial Planar Pin Diode for High Frequency Attenuator

Features • Low forward resistance. (rf = 5.5 Ω max) • MPAK package is suitable for high density surface mounting and high speed assembly.

文件：156.86 Kbytes 页数：5 Pages

RENESAS

瑞萨

Voltage Diodes

LRC

乐山无线电

Diodes>Switching

Renesas

瑞萨