Silicon Epitaxial Planar Pin Diode for High Frequency Attenuator

Features • Low forward resistance. (rf = 5.5 Ω max) • MPAK package is suitable for high density surface mounting and high speed assembly.

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RENESAS

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Diodes>Switching

Renesas

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GaAlAs Infrared Light Emitting Diode

GaAlAs Infrared Light Emitting Diode Light source for distance measuring systems Features ● High-power output, high-efficiency : PO = 5.5 mW (typ.) ● Fast response and high-speed modulation capability : tr, tf = 20 ns (typ.) ● Infrared light emission close to monochromatic light : λP = 880 nm

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PANASONIC

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GaAlAs Infrared Light Emitting Diode

GaAlAs Infrared Light Emitting Diode Light source for distance measuring systems Features ● High-power output, high-efficiency : PO = 5.5 mW (typ.) ● Fast response and high-speed modulation capability : tr, tf =20 ns (typ.) ● Infrared light emission close to monochromatic light : λP = 880 nm(

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PANASONIC

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Silicon Complementary Transistors High Voltage Amplifier & Driver

Description: The NTE188 (NPN) and NTE189 (PNP) are complementary silicon transistors in a TO202N type package designed for general purpose, high voltage amplifier and driver applications. Features: • High Collector–Emitter Breakdown Voltage: V(BR)CEO = 80V @ IC = 1mA • High Power Dis

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NTE