Silicon Epitaxial Trench Pin Diode for Antenna Switching

Features • Adopting the trench structure improves low capacitance.(C = 0.43 pF max) • Low forward resistance. (rf = 1.8 Ω max) • Low operation current. • Thin Extremely small Flat Lead Package (TEFP) is suitable for surface mount design.

文件：163.74 Kbytes 页数：6 Pages

RENESAS

瑞萨

Diodes>Switching

Renesas

瑞萨

PNP resistor-equipped transistor

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

文件：66.14 Kbytes 页数：8 Pages

PHI

PHI

PNP resistor-equipped transistor

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

文件：49.03 Kbytes 页数：8 Pages

PHI

PHI

PNP resistor-equipped transistor

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

文件：69.49 Kbytes 页数：8 Pages

PHI

PHI