Silicon Epitaxial Trench Pin Diode for Antenna Switching

Features • Adopting the trench structure improves low capacitance.(C = 0.6 pF max) • Low forward resistance. (rf = 2.0 Ω max) • Low operation current. • Super small Flat Package (SFP) is suitable for surface mount design.

文件：80.87 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon Epitaxial Trench Pin Diode for Antenna Switching

Renesas

瑞萨

Data Acquisition

Data Acquisition

文件：6.38071 Mbytes 页数：180 Pages

INTERSIL

Data Acquisition

Data Acquisition

文件：6.38071 Mbytes 页数：180 Pages

INTERSIL

High Speed 1Mbit/s

文件：679.68 Kbytes 页数：14 Pages

ISOCOM

英国安数光