Variable Capacitance Diode for UHF/VHF tuner

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RENESAS

瑞萨

Diodes>Variable Capacitance

Renesas

瑞萨

BROADBAND RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 40 Watts Minimum Gain = 9.0 dB • Built–In Matching Network for Broadb

文件：107.71 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Silicon P-Channel JFET Transistor General Purpose AF Amplifier

Silicon P–Channel JFET Transistor General Purpose AF Amplifi

文件：21.37 Kbytes 页数：2 Pages

NTE

4W High Power Laser Diode

Description The SLD326YT has a compatible package, and allows independent thermal and electric design. It is a high power laser diode that affords easy optical design. Features • High-optical power output Recommended optical power output: PO = 4.0W • High-optical power output density: 4W

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SONYSony Corporation

索尼