Silicon Epitaxial Trench Pin Diode for Antenna Switching

Features • Adopting the trench structure improves low capacitance.(C = 0.45 pF max) • Low forward resistance. (rf = 2.5Ω max) • Low operation current. • Ultra small Flat Package (UFP) is suitable for surface mount design and stable rf characteristics in high frequency.

文件：25.64 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon Epitaxial Trench Pin Diode

Features ● Adopting the trench structure improves low capacitance.(C = 0.45 pF max) ● Low forward resistance. (rf=2.5 Ω max) ● Low operation current.

文件：32.74 Kbytes 页数：1 Pages

KEXIN

科信电子

Silicon Epitaxial Trench Pin Diode for Antenna Switching

HITACHI

日立

1/2 WATT METAL

文件：892.97 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

1/2 WATT METAL

文件：892.97 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

1/2 WATT METAL

文件：929.88 Kbytes 页数：1 Pages

NTE