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HUF76113T3ST数据手册Renesas中文资料规格书
HUF76113T3ST规格书详情
描述 Description
This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery operated products.
特性 Features
• Logic Level Gate Drive
• 4.7A, 30V
• Ultra Low On-Resistance, rDS(ON) = 0.031Ω
• Temperature Compensating PSPICE® Model
• Temperature Compensating SABER™ Model
• Thermal Impedance SPICE Model
• Thermal Impedance SABER Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
技术参数
- 型号：
HUF76113T3ST
- 功能描述：
MOSFET 4.7a 30V 0.031 Ohm Logic Level N-Ch
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FSC/ON |
23+ |
原包装原封 □□ |
34835 |
原装进口特价供应 特价，原装元器件供应，支持开发样品 更多详细咨询 库存 |
询价 | ||
N/A |
25+ |
SOT223 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
询价 | ||
onsemi(安森美) |
24+ |
SOT-223-4 |
9555 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
FC |
05+ |
原厂原装 |
21716 |
只做全新原装真实现货供应 |
询价 | ||
FAIRCHIL |
2023+ |
SOT-223 |
50000 |
原装现货 |
询价 | ||
ON/安森美 |
23+ |
SOT223 |
6000 |
专注配单,只做原装进口现货 |
询价 | ||
ON/安森美 |
23+ |
SOT223 |
6000 |
专注配单,只做原装进口现货 |
询价 | ||
FAI |
25+23+ |
SOT223 |
72204 |
绝对原装正品现货,全新深圳原装进口现货 |
询价 | ||
INSL |
23+ |
SOT223 |
48237 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
INSL |
00+ |
SOT223 |
3292 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 |
