HUF76113T3ST数据手册ONSEMI中文资料规格书

描述 Description

This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery operated products.

特性 Features

• Logic Level Gate Drive
• 4.7A, 30V
• Ultra Low On-Resistance, rDS(ON) = 0.031Ω
• Temperature Compensating PSPICE® Model
• Temperature Compensating SABER™ Model
• Thermal Impedance SPICE Model
• Thermal Impedance SABER Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
   - TB334, “Guidelines for Soldering Surface Mount
      Components to PC Boards”