56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

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FAIRCHILD

仙童半导体

56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：234.92 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET

This N-Channel power MOSFETs is manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the

文件：204.57 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET

This N-Channel power MOSFETs is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the

文件：136.53 Kbytes 页数：10 Pages

INTERSIL

56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：370.04 Kbytes 页数：9 Pages

INTERSIL

56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：229.33 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：234.92 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：234.92 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

丝印：75639S；Package：TO-262AA；N-Channel UltraFET Power MOSFET 100 V, 56 A, 25 m廓

文件：532.95 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

丝印：75639S；Package：TO-263AB；N-Channel UltraFET Power MOSFET 100 V, 56 A, 25 m廓

文件：532.95 Kbytes 页数：11 Pages

ONSEMI

安森美半导体