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HUF75329P3中文资料仙童半导体数据手册PDF规格书
HUF75329P3规格书详情
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low voltage bus switches, and power management in portable and battery-operated products.
特性 Features
• 49A, 55V
• Ultra Low On-Resistance, rDS(ON) = 0.024Ω
• Temperature Compensating PSPICE® and SABER™ Models
- Available on the web at: www.fairchildsemi.com
• Thermal Impedance PSPICE and SABER Models
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
产品属性
- 型号：
HUF75329P3
- 功能描述：
MOSFET 20a 55V N-Channel UltraFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VBsemi |
21+ |
TO220 |
10026 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
FAIRCHILD/仙童 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
INTESIL |
23+ |
TO-220 |
10000 |
专做原装正品,假一罚百! |
询价 | ||
Fairchild/ON |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
询价 | ||
VBsemi |
24+ |
TO220 |
9000 |
只做原装正品 有挂有货 假一赔十 |
询价 | ||
FSC |
17+ |
TO-220 |
6200 |
询价 | |||
FAIRCHILD/仙童 |
2023+ |
TO220 |
6893 |
十五年行业诚信经营,专注全新正品 |
询价 | ||
FAIRCHILD/仙童 |
25+ |
TO220 |
860000 |
明嘉莱只做原装正品现货 |
询价 | ||
FAIRCHILD/仙童 |
22+ |
TO220 |
18000 |
原装正品 |
询价 | ||
FAIRC |
2023+ |
TO-220 |
50000 |
原装现货 |
询价 |
