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HUF75329G3中文资料PDF规格书
HUF75329G3规格书详情
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low voltage bus switches, and power management in portable and battery-operated products.
Features
• 49A, 55V
• Ultra Low On-Resistance, rDS(ON) = 0.024Ω
• Temperature Compensating PSPICE® and SABER™ Models
- Available on the web at: www.fairchildsemi.com
• Thermal Impedance PSPICE and SABER Models
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
产品属性
- 型号:
HUF75329G3
- 功能描述:
MOSFET 20a 55V N-Channel UltraFET
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
F |
2020+ |
T0-220 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
FAIRCHILD |
20+ |
TO-247 |
36900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
Fairchild/ON |
21+ |
TO2473 |
13880 |
公司只售原装,支持实单 |
询价 | ||
FAIRCHILD/仙童 |
21+ |
TO220 |
1062 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
询价 | ||
INTESIL |
23+ |
TO-220 |
10000 |
专做原装正品,假一罚百! |
询价 | ||
FAIRCHILD/仙童 |
2022 |
TO-247 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
FAIRC |
2018+ |
TO220 |
6528 |
承若只做进口原装正品假一赔十! |
询价 | ||
FAIRCHILD |
23+ |
TO-TO-220 |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
FAIRCHILD/仙童 |
06+ |
TO-247 |
300 |
询价 | |||
FAIRCHILD/仙童 |
22+/23+ |
TO-247 |
9800 |
原装进口公司现货假一赔百 |
询价 |