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HUF75329G3中文资料仙童半导体数据手册PDF规格书
HUF75329G3规格书详情
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low voltage bus switches, and power management in portable and battery-operated products.
特性 Features
• 49A, 55V
• Ultra Low On-Resistance, rDS(ON) = 0.024Ω
• Temperature Compensating PSPICE® and SABER™ Models
- Available on the web at: www.fairchildsemi.com
• Thermal Impedance PSPICE and SABER Models
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
产品属性
- 型号：
HUF75329G3
- 功能描述：
MOSFET 20a 55V N-Channel UltraFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
NA/ |
300 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
VBsemi |
21+ |
TO220 |
10026 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
FAIRCHILD |
20+ |
TO-247 |
36900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
FAIRCHILD/仙童 |
06+ |
TO-247 |
300 |
询价 | |||
HARRIS/哈里斯 |
23+ |
TO220 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
INTESIL |
23+ |
TO-220 |
10000 |
专做原装正品,假一罚百! |
询价 | ||
FSC |
25+23+ |
TO-247 |
27821 |
绝对原装正品全新进口深圳现货 |
询价 | ||
Fairchild/ON |
22+ |
TO2473 |
9000 |
原厂渠道,现货配单 |
询价 | ||
FAIRCHILD/仙童 |
24+ |
TO-247 |
300 |
只做原厂渠道 可追溯货源 |
询价 | ||
FAIRCHILD |
24+ |
TO-220 |
149 |
询价 |
