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HUF75309D3中文资料仙童半导体数据手册PDF规格书
HUF75309D3规格书详情
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.
Features
• 19A, 55V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™ Models
- SPICE and SABER Thermal Impedance Models Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”
产品属性
- 型号：
HUF75309D3
- 功能描述：
MOSFET DISC BY MFG 2/02
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INTERSIL |
07+ |
TO-251 |
2025 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
FAIRCHILD/仙童 |
03+ |
TO-252 |
21567 |
询价 | |||
NK/南科功率 |
2025+ |
TO-252-2-L |
986966 |
国产 |
询价 | ||
INTERSIL |
25+23+ |
TO-252 |
14902 |
绝对原装正品全新进口深圳现货 |
询价 | ||
INTERSIL |
24+ |
TO-251 |
2025 |
只做原厂渠道 可追溯货源 |
询价 | ||
INTERSIL |
1816+ |
. |
6523 |
科恒伟业!只做原装正品,假一赔十! |
询价 | ||
FAIRCHILD |
24+ |
TO-252 |
8866 |
询价 | |||
INTERSIL |
24+ |
NA/ |
5275 |
原装现货,当天可交货,原型号开票 |
询价 | ||
onsemi(安森美) |
24+ |
TO252 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
FAIRCHILD |
23+ |
TO-252 |
9526 |
询价 |
