PNP EPITAXIAL PLANAR TRANSISTOR

Description The HTL294D is designed for application that requires high voltage. Features • High Breakdown Voltage: 400(Min.) at IC=1mA • High Current: IC=300mA at 25°C

文件：34.54 Kbytes 页数：3 Pages

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PNP EPITAXIAL PLANAR TRANSISTOR

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PNP EPITAXIAL PLANAR TRANSISTOR

Description The HTL294I is designed for application that requires high voltage. Features • High Breakdown Voltage: 400(Min.) at IC=1mA • High Current: IC=300mA at 25°C

文件：31.95 Kbytes 页数：3 Pages

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PNP EPITAXIAL PLANAR TRANSISTOR

Description The HTL294J is designed for application that requires high voltage. Features • High Breakdown Voltage: 400(Min.) at IC=1mA • High Current: IC=300mA at 25°C

文件：29.69 Kbytes 页数：3 Pages

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PNP EPITAXIAL PLANAR TRANSISTOR

Description The HTL294MD is designed for high voltage low power switching applications especially for use in telephone and telecommunication circuits.

文件：34.81 Kbytes 页数：3 Pages

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