PNP EPITAXIAL PLANAR TRANSISTOR

Description The HTL294J is designed for application that requires high voltage. Features • High Breakdown Voltage: 400(Min.) at IC=1mA • High Current: IC=300mA at 25°C

文件：29.69 Kbytes 页数：3 Pages

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华昕

PNP EPITAXIAL PLANAR TRANSISTOR

HSMC

华昕

PNP EPITAXIAL PLANAR TRANSISTOR

Description The HTL294MD is designed for high voltage low power switching applications especially for use in telephone and telecommunication circuits.

文件：34.81 Kbytes 页数：3 Pages

HSMC

华昕

PNP EPITAXIAL PLANAR TRANSISTOR

Description The HTL294MI is designed for high voltage low power switching applications especially for use in telephone and telecommunication circuits.

文件：32.42 Kbytes 页数：3 Pages

HSMC

华昕

PNP EPITAXIAL PLANAR TRANSISTOR

Description The HTL294MJ is designed for high voltage low power switching applications especially for use in telephone and telecommunication circuits.

文件：29.39 Kbytes 页数：3 Pages

HSMC

华昕