NPN EPITAXIAL PLANAR TRANSISTOR

Description The HTIP102 is designed for use in general purpose amplifier and low speed switching applications.

文件：37.81 Kbytes 页数：4 Pages

HSMC

华昕

NPN EPITAXIAL PLANAR TRANSISTOR

HSMC

华昕

Ultrafast Recovery Modules

Ultrafast Recovery Modules • Ultra Fast Recovery • 175 °C Junction Temperature • VRRM 50 to 800 Volts • High surge capacity • 100 Amp current rating • ROHS Compliant

文件：215.51 Kbytes 页数：4 Pages

Microsemi

美高森美

High EMI resistance accelerometers

Key features • Case-base isolated up to 6 kV • Ideal for power generation applications • Rapid shock recovery • Improved EMI resistance • Manufactured in an approved ISO 9001 facility

文件：343.73 Kbytes 页数：3 Pages

WILCOXON

Low-frequency, high EMI resistance accelerometers

Key features • Ultra low-frequency measurements • Case-base isolated up to 6 kV • Ideal for power generation applications • Rapid shock recovery • Improved EMI resistance • Manufactured in an approved ISO 9001 facility

文件：465.81 Kbytes 页数：3 Pages

WILCOXON