PNP EPITAXIAL PLANAR TRANSISTOR

Description The HTIP125 is designed for medium power linear and switching applications. Absolute Maximum Ratings(Ta=25°C) •Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction T

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HSMC

华昕

PNP EPITAXIAL PLANAR TRANSISTOR

Description\nThe HTIP125 is designed for medium power linear and switching applications.Absolute Maximum Ratings(Ta=25°C)\n•Maximum Temperatures\nStorage Temperature ............................................................................................ -55 ~ +150 °C\nJunction Temperature .....

HSMC

华昕

General Purpose Silicon Rectifier

Description: The NTE125 is a general purpose silicon rectifier in a DO41 case designed for low power and switching applications.

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NTE

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

文件：206.87 Kbytes 页数：4 Pages

MOSPEC

统懋

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

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MOTOROLA

摩托罗拉