PNP EPITAXIAL PLANAR TRANSISTOR

Description The HTIP125 is designed for medium power linear and switching applications. Absolute Maximum Ratings(Ta=25°C) •Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction T

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HSMC

华昕

PNP EPITAXIAL PLANAR TRANSISTOR

Description\nThe HTIP125 is designed for medium power linear and switching applications.Absolute Maximum Ratings(Ta=25°C)\n•Maximum Temperatures\nStorage Temperature ............................................................................................ -55 ~ +150 °C\nJunction Temperature .....

HSMC

华昕

HIGH VOLTAGE RECTIFIER DIODES

FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free

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EIC

HIGH VOLTAGE RECTIFIER DIODES

FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free

文件：30.91 Kbytes 页数：2 Pages

SYNSEMI

HIGH VOLTAGE

FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free

文件：36 Kbytes 页数：2 Pages

EIC