LCD MODULE (320 횞 RGB 횞 240)

文件：1.36535 Mbytes 页数：21 Pages

HYES

LCD MODULE(320 횞 RGB 횞 240)

文件：863.56 Kbytes 页数：21 Pages

HYES

DC / DC Converter Applications

TR : NPN Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode Features • Composite type with an NPN transistor and a Schottky barrier diode contained in one package facilitating high-density mounting. • The MCH5702 consists of two chips which are equivalent to the MCH6201 and the S

文件：39.17 Kbytes 页数：5 Pages

SANYO

三洋

NECs 2.4 GHz Si LD MOS POWER AMPLIFIER

3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS DESCRIPTION The µPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS and 2.4 GHz applications. This IC consists of two stage amplifier

文件：176.33 Kbytes 页数：4 Pages

CEL

NECs 2.4 GHz Si LD MOS POWER AMPLIFIER

3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS DESCRIPTION The µPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS and 2.4 GHz applications. This IC consists of two stage amplifier

文件：176.33 Kbytes 页数：4 Pages

CEL