首页 >HT4927U电源IC>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
AudioPowerAmplifierSeries2.5WattFullyDifferentialAudioPowerAmplifierWithShutdown | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
2.5WattFullyDifferentialAudioPowerAmplifierWithShutdown | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | ||
2.5WattFullyDifferentialAudioPowerAmplifierWithShutdown | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | ||
AudioPowerAmplifierSeries2.5WattFullyDifferentialAudioPowerAmplifierWithShutdown | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
AudioPowerAmplifierSeries2.5WattFullyDifferentialAudioPowerAmplifierWithShutdown | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
1000Base-T,짹15kVESDProtectionLANSwitch GeneralDescription TheMAX4927meetstheneedsofhigh-speeddifferentialswitching,includingthatofGigabitEthernet(10/100/1000)Base-TswitchingaswellasLVDSandLVPECLswitching.TheMAX4927providesenhancedESDprotectionupto±15kVandexcellenthigh-frequencyresponse,makingthe | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
1000Base-T,짹15kVESDProtectionLANSwitch GeneralDescription TheMAX4927meetstheneedsofhigh-speeddifferentialswitching,includingthatofGigabitEthernet(10/100/1000)Base-TswitchingaswellasLVDSandLVPECLswitching.TheMAX4927providesenhancedESDprotectionupto±15kVandexcellenthigh-frequencyresponse,makingthe | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
SurgeClamping,TransientOvervoltageSuppressorBidirectional Description: TheNTE4900seriesofsiliconTransientSuppressorsdesignedtoprotectvoltagesensitivecomponentsfromhighenergyvoltagetransients.Transientovervoltagesuppressordeviceshavebecomeveryimportantasaconsequenceoftheirhighsurgecapability,extremelyfastresponsetime | NTE NTE Electronics | NTE | ||
SingleN?묬hannelPowerMOSFET MOSFET–Power,Single,N-Channel,SO-8FL30V,38A Features •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •OptimizedGateChargetoMinimizeSwitchingLosses •Optimizedfor5V,12VGateDrives •TheseDevicesarePb−Free,HalogenFree/BFRFree | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SingleN?묬hannelPowerMOSFET MOSFET–Power,Single,N-Channel,SO-8FL30V,38A Features •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •OptimizedGateChargetoMinimizeSwitchingLosses •Optimizedfor5V,12VGateDrives •TheseDevicesarePb−Free,HalogenFree/BFRFree | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
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