过电压保护IC

Heroic

禾润

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 μS short circuit SOA • Square RBSOA • 100 of the parts tested for 4X rated current (ILM) • Positive VCE (ON) Temperature co-efficient • Ultra fast soft Recovery C

文件：779.11 Kbytes 页数：10 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：346.06 Kbytes 页数：11 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR

Features • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 μS short circuit SOA • Square RBSOA • 100 of the parts tested for ILM  • Positive VCE (ON) Temperature co-efficient • Tight parameter distribution • Lead Free Package Benefits

文件：264 Kbytes 页数：10 Pages

IRF