HV2803

NoHigh-VoltageBias,LowHarmonicDistortion,32-Channel,High-VoltageAnalogSwitch

Features •32-Channel,High-VoltageAnalogSwitch •NoHigh-VoltageSuppliesRequired •32-Channel,Single-Pole,Single-Throw(SPST) IndividualSwitchingorBankSwitching •3.3VCMOSInputLogicLevel •66MHzDataShiftClockFrequency •Silicon-on-Insulator(SOI)High-Voltage Technology

HV2803/AHA

NoHigh-VoltageBias,LowHarmonicDistortion,32-Channel,High-VoltageAnalogSwitch

Features •32-Channel,High-VoltageAnalogSwitch •NoHigh-VoltageSuppliesRequired •32-Channel,Single-Pole,Single-Throw(SPST) IndividualSwitchingorBankSwitching •3.3VCMOSInputLogicLevel •66MHzDataShiftClockFrequency •Silicon-on-Insulator(SOI)High-Voltage Technology

HV2803SLASHAHA

NoHigh-VoltageBias,LowHarmonicDistortion,32-Channel,High-VoltageAnalogSwitch

Features •32-Channel,High-VoltageAnalogSwitch •NoHigh-VoltageSuppliesRequired •32-Channel,Single-Pole,Single-Throw(SPST) IndividualSwitchingorBankSwitching •3.3VCMOSInputLogicLevel •66MHzDataShiftClockFrequency •Silicon-on-Insulator(SOI)High-Voltage Technology

IRLML2803

HEXFETPowerMOSFET

IRLML2803

PowerMOSFET(Vdss=30V,Rds(on)=0.25ohm)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFET®powerMOSFETsarewellknownfor,provid

IRLML2803

GenerationVTechnologyUltraLowOn-Resistance

Features VDS(V)=30V RDS(ON)

IRLML2803

MOSFET

Features VDS(V)=30V RDS(ON)

IRLML2803GPBF

HEXFETPowerMOSFET

IRLML2803GTRPBF

N-Channel30-V(D-S)MOSFET

IRLML2803PBF

HEXFETPowerMOSFET