INA152

Single-SupplyDIFFERENCEAMPLIFIER

FEATURES SWING:toWithin200mVofEitherOutputRail LOWOFFSETDRIFT:±3μV/°C LOWOFFSETVOLTAGE:±250μV HIGHCMR:94dB LOWGAINERROR:0.01% LOWGAINERRORDRIFT:1ppm/°C WIDESUPPLYRANGE: Single:2.7Vto20V Dual:±1.35Vto±10V MSOP-8PACKAGE APPLICATIONS DIFFERENCEINPUTA

INA152EA

Single-SupplyDIFFERENCEAMPLIFIER

IPM-C152

MiniatureIntegratedPowerMonitor

IPM-L152

MiniatureIntegratedPowerMonitor

IQXC-152

Highfrequencyfundamentalquartzcrystalinaminiatureceramicpackagewithaseam-sealedmetallid.

IRF152

N-ChannelPowerMOSFETs,40A,60V/100V

N-ChannelPowerMOSFET40A,60V/100V

IRF152

N-CHANNELPOWERMOSFETS

FEATURES ●LOWRDS(on) ●ImprovedInductiveruggedness ●Fastswitchingtimes ●Ruggedpolyslllcongatecellstructure ●Lowinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Highcurrent)

IRF152

HIGHVOLTAGEPOWERMOSFETDIE

FEATURES: ●Fastswitchingtimes ●LOWRDS(on)HDMOS™process ●Ruggedpolyslllcongatecellstructure ●Excellenthighvoltagestability ●Lowinputcapacitance ●Improvedhightemperaturereliability APPLICATIONS ●Switchingpowersupplies ●Motorcontrols ●AudioAmplifiers ●Inver

IRF152

N-CHANNELPOWERMOSFETS

FEATURES ●LOWRDS(on) ●ImprovedInductiveruggedness ●Fastswitchingtimes ●Ruggedpolyslllcongatecellstructure ●Lowinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Highcurrent)

IRF152

HighPower,HighSpeedApplications