丝印：HT；SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

Features ● Glass Passivated Die Construction ● Uni- and Bi-Directional Versions Available ● Excellent Clamping Capability ● Fast Response Time ● Plastic Material: UL Flammability Classification Rating 94V-0

文件：692.73 Kbytes 页数：5 Pages

SUNMATE

森美特

丝印：hT；Package：SSOP5；Free Time Delay Setting CMOS Voltage Detector (Reset) IC

General Description ROHM's Free Time Delay Setting CMOS Voltage Detector ICs are highly accurate, with ultra-low current consumption feature that uses CMOS process. Delay time setting can be control by an external capacitor. The lineup includes N-channel open drain output (BD52xxG-1). The de

文件：1.47296 Mbytes 页数：22 Pages

ROHM

罗姆

丝印：HT；Package：SC-79；Voltage regulator diodes

1. General description General-purpose Zener diodes in an SOD523 (SC-79) ultra small flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Non-repetitive peak reverse power dissipation: ≤ 40 W • Total power dissipation: ≤ 300 mW • Wide working voltage range: no

文件：307.05 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：HT；Package：SOD523；Voltage regulator diodes

Features and benefits  Non-repetitive peak reverse power dissipation:  40 W  Total power dissipation:  300 mW  AEC-Q101 qualified  Wide working voltage range: nominal 2.4 V to 75 V (E24 range)  Two tolerance series: 2 and 5  Low differential resistance

文件：901.02 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：HT；Package：SOD-523；Transient Voltage Suppressors for ESD Protection

Features 50 ~ 123 Watts Peak Pulse Power per Line (tp=8/20μs) Protects one I/O line(Bidirectional) Low clamping voltage Working voltages 3.3V ~ 12V Low leakage current IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact) 3.3V and 5V IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) 8V and 12V IEC6

文件：2.30116 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：HT；Package：SOD-523；Transient Voltage Suppressors for ESD Protection

Features Moisture Sensitivity Level (MSL -1) AEC-Q101 qualified 50~120 Watts Peak Pulse Power per Line (tp=8/20μs) Protects one bidirectional I/O line Low Clamping Voltage Working Voltages: 3.3V,5V,8V,12V Low leakage current EC61000-4-2(ESD):±30kV(air),±30kV(contact): 3.3V and 5V IEC61000

文件：2.22399 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：HT；Package：SOD-123；Transient Voltage Suppressors for ESD Protection

Features 1000 Watts Peak Pulse Power per Line (tp=8/20μs) 200 Watts Peak Pulse Power per Line (tp=10/1000μs) Protects one I/O line or power line Low clamping voltage Working voltages : 5V to 190V Low leakage current IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact) IEC61000-4-4 (EFT) 80A (5/

文件：2.31369 Mbytes 页数：5 Pages

UNSEMI

优恩半导体

丝印：HT；Package：DO-219AA；SURFACE MOUNT UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS

FEATURES • For surface mounted applications • Reliable low cost construction utilizing molded plastic technique. • Typical IR less than 1uA above 10V • Fast response time: typically less than 1.0ns for Uni-direction,less than 5.0ns for Bi-direction,form Volts to BV min • RoHS compliant • IE

文件：610.37 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：HT；Package：SMA；400W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

Glass Passivated Die Construction 400W Peak Pulse Power Dissipation 5.0V – 440V Standoff Voltage Uni- and Bi-Directional Versions Available Excellent Clamping Voltage Typical Response Time

文件：111.34 Kbytes 页数：6 Pages

WTE

Won-Top Electronics

丝印：HT；Package：TO-236AB；60 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Extended temperature range Tj = 175 °C • Trench MOSFE

文件：271.49 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司