Silicon Epitaxial Planar Diode for High Speed Switching

Features • Short reverse recovery time and forward recovery time. • Suitable for 5mm pitch high speed automatical insertion. • Small glass package (MHD) enables easy mounting and high reliability.

文件：25.31 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon Epitaxial Planar Diode for High Speed Switching

Features • Short reverse recovery time and forward recovery time. • Suitable for 5 mm pitch high speed automatically insertion. • Small glass package (MHD) enables easy mounting and high reliability.

文件：141.65 Kbytes 页数：5 Pages

RENESAS

瑞萨

Silicon Epitaxial Planar Diode for High Speed Switching

• Short reverse recovery time and forward recovery time.\n• Suitable for 5 mm pitch high speed automatically insertion.\n• Small glass package (MHD) enables easy mounting and high reliability.;

Renesas

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SCHOTTKY BARRIER RECTIFIERS(1.0A,20-60V)

文件：223.94 Kbytes 页数：3 Pages

MOSPEC

统懋

HIGH FREQUENCY NPN TRANSISTOR ARRAY

DESCRIPTION AND APPLICATIONS The µPA104 is a user-configurable, Si bipolar transistor array for formation of high speed OR/NOR gates. Its internal transistor configuration and external connection options allow the user considerable flexibility in its application. Its high gain bandwidth product (

文件：65.2 Kbytes 页数：8 Pages

NEC

瑞萨

HIGH FREQUENCY NPN TRANSISTOR ARRAY

DESCRIPTION AND APPLICATIONS The µPA104 is a user-configurable, Si bipolar transistor array for formation of high speed OR/NOR gates. Its internal transistor configuration and external connection options allow the user considerable flexibility in its application. Its high gain bandwidth product (

文件：65.2 Kbytes 页数：8 Pages

NEC

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