Surface Mount RF Schottky Barrier Diodes

Description/Applications These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package configurations to give the designer wide flexibility. Typical applications of these Schottky diodes are mixing, detectin

文件：212.43 Kbytes 页数：14 Pages

HP

安捷伦

Surface Mount RF Schottky Barrier

文件：505.68 Kbytes 页数：15 Pages

AVAGO

安华高

Package：6-TSSOP，SC-88，SOT-363；包装：散装 类别：分立半导体产品 二极管 - 射频 描述：RF DIODE SCHOTTKY 15V SOT363

BOARDCOM

博通

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

文件：142.3 Kbytes 页数：11 Pages

MOTOROLA

摩托罗拉

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

文件：142.3 Kbytes 页数：11 Pages

MOTOROLA

摩托罗拉

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

文件：142.3 Kbytes 页数：11 Pages

MOTOROLA

摩托罗拉