| 零件型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
2.8Aand3.3A,350Vand400V,1.8and2.5Ohm,N-ChannelPowerMOSFETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
HEXFET짰PowerMOSFET VDSS=55V RDS(on)=8.0mΩ ID=110A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFE | IRF International Rectifier | IRF | ||
0.5A,400V,1.800Ohm,N-ChannelPowerMOSFET Description ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuch | Intersil Intersil Corporation | Intersil | ||
PowerMOSFET(Vdss=400V,Rds(on)=1.8ohm,Id=0.49A) VDSS=400V RDS(on)=1.8Ω ID=0.49A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca | IRF International Rectifier | IRF | ||
PowerMOSFET VDS(V)400 RDS(on)(Ω)VGS=10V1.8 Qg(Max.)(nC)20 Qgs(nC)3.3 Qgd(nC)11 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Forautomaticinsertion •Endstackable •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgene | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HEXFETPOWERMOSFET(VDSS=400V,RDS(on)=1.8廓,ID=0.49A) VDSS=400V RDS(on)=1.8Ω ID=0.49A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca | IRF International Rectifier | IRF | ||
PowerMOSFET VDS(V)400 RDS(on)(Ω)VGS=10V1.8 Qg(Max.)(nC)20 Qgs(nC)3.3 Qgd(nC)11 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18) REPETITIVEAVALANCHEANDdv/dtRATED HEXFET®TRANSISTORSSURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesigners | IRF International Rectifier | IRF | ||
SimpleDriveRequirements | IRF International Rectifier | IRF |
产品属性
- 产品编号：
HSMQ-C320
- 制造商：
Broadcom Limited
- 类别：
光电器件 > LED 指示 - 分立
- 包装：
带
- 颜色：
绿色
- 配置：
标准
- 毫烛光等级：
2812mcd
- 透镜样式：
圆形，带圆顶
- 透镜尺寸：
0.70mm 直径
- 电压 - 正向 (Vf)（典型值）：
3V
- 电流 - 测试：
20mA
- 视角：
40°
- 安装类型：
表面贴装型
- 波长 - 主：
527nm
- 波长 - 峰值：
520nm
- 封装/外壳：
0603（1608 公制）
- 供应商器件封装：
片式 LED
- 大小 / 尺寸：
1.60mm 长 x 0.80mm 宽
- 高度（最大值）：
1.08mm
- 描述：
CHIP,TOP MT,INGAN, GRN
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
BROADCOM/AVAGO |
21+ |
SMDSMT |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
Broadcom Limited |
17+18+22+ |
0603(1608 公制) |
25480 |
原装+实力库存+当天发货 |
询价 | ||
Broadcom Limited |
24+ |
0603(1608 公制) |
6000 |
只做原装，欢迎询价，量大价优 |
询价 | ||
SYNERGY |
2017+ |
SMD |
1585 |
只做原装正品假一赔十! |
询价 | ||
MINI |
24+ |
SMD |
3600 |
MINI专营品牌全新原装正品假一赔十 |
询价 | ||
SYNERGY |
24+ |
SMD |
3200 |
进口原装假一赔百 |
询价 | ||
SYNERGY |
原厂封装 |
685 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
SYNERGY |
2318+ |
原装正品 |
4285 |
十年专业专注 优势渠道商正品保证 |
询价 | ||
- |
23+ |
NA |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
SYNERGY |
20+ |
NA |
5000 |
全新原装现货,一片也是批量价。 |
询价 |
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