MMJT9410

BipolarPowerTransistors

BipolarPowerTransistors NPNSilicon •Collector–EmitterSustainingVoltage—VCEO(sus) =30Vdc(Min)@IC=10mAdc •HighDCCurrentGain—hFE =85(Min)@IC=1.0Adc =60(Min)@IC=3.0Adc •LowCollector–EmitterSaturationVoltage—VCE(sat) =0.2Vdc(Max)@IC=

MMJT9410

BipolarPowerTransistorsNPNSilicon

MMJT9410G

BipolarPowerTransistorsNPNSilicon

MT9410

N-Channel60V(D-S)MOSFET

NCID9410

HighSpeedQuad-ChannelDigitalIsolator

Description TheNCID9401,NCID9411,NCID9400andNCID9410are galvanicallyisolatedhigh−speedquad−channeldigitalisolatorwith outputenable.Thisdevicesupportsisolatedcommunicationsthereby allowingdigitalsignalstocommunicatebetweensystemswithout conductinggroundloopsorhaza

NCIV9410

HighSpeedQuad-ChannelDigitalIsolator

Description TheNCID9401,NCID9411,NCID9400andNCID9410are galvanicallyisolatedhigh−speedquad−channeldigitalisolatorwith outputenable.Thisdevicesupportsisolatedcommunicationsthereby allowingdigitalsignalstocommunicatebetweensystemswithout conductinggroundloopsorhaza

NDS9410

SingleN-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedevicesareparticularlysuitedforlow

NDS9410A

SingleN-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedevicesareparticularlysuitedforlow

NDS9410A-NL

N-Channel650V(D-S)MOSFET

NDS9410-NL

N-Channel60V(D-S)MOSFET