HS9-80C86RHSLASHPROTO中文资料瑞萨数据手册PDF规格书

特性 Features

•Electrically Screened to SMD # 5962-95722

•QML Qualified per MIL-PRF-38535 Requirements

•Radiation Performance

-Latch Up Free EPl-CMOS

-Total Dose. . . . . . . . . . . . . . . . . . . . .100 krad(Si) (Max)

-Transient Upset . . . . . . . . . . . . . . . . . . . .>108 rad(Si)/s

•Low Power Operation

-ICCSB. . . . . . . . . . . . . . . . . . . . . . . . . . . . .500A (Max)

-ICCOP . . . . . . . . . . . . . . . . . . . . . . . 12mA/MHz (Max)

•Pin Compatible with NMOS 8086 and Intersil 80C86

•Completely Static Design DC to 5MHz

•1MB Direct Memory Addressing Capability

•24 Operand Addressing Modes

•Bit, Byte, Word, and Block Move Operations

•8-Bit and 16-Bit Signed/Unsigned Arithmetic

-Binary or Decimal

-Multiply and Divide

•Bus-Hold Circuitry Eliminates Pull-up Resistors for CMOS Designs

•Hardened Field, Self-Aligned, Junction-Isolated CMOS Process

•Single 5V Power Supply

•Military Temperature Range. . . . . . . . . . . -35oC to 125oC

•Minimum LET for

Single Event Upset . . . . . . . . . . . . .6MEV/mg/cm2 (Typ)