HS9-6664RH-Q中文资料INTERSIL数据手册PDF规格书

The Intersil HS-6664RH is a radiation hardened 64k CMOS PROM, organized in an 8k word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process, and utilizes synchronous circuit design techniques to achieve high speed performance with very low power dissipation.

特性 Features

• Electrically Screened to SMD # 5962-95626

• QML Qualified per MIL-PRF-38535 Requirements

• 1.2 Micron Radiation Hardened Bulk CMOS

• Total Dose . . . . . . . . . . . . . . . . . . . . . . 300 krad(Si) (Max)

• Transient Output Upset . . . . . . . . . . . . . .>5x108 rad(Si)/s

• LET >100 MEV-cm2/mg

• Fast Access Time. . . . . . . . . . . . . . . . . . . . . . . 35ns (Typ)

• Single 5V Power Supply

• Single Pulse 10V Field Programmable

• Synchronous Operation

• On-Chip Address Latches

• Three-State Outputs

• NiCr Fuses

• Low Standby Current . . . . . . . . . . . . . . <500μA (Pre-Rad)

• Low Operating Current. . . . . . . . . . . . . . . . . . <15mA/MHz

• Military Temperature Range. . . . . . . . . . . -55°C to 125°C