HS9-65647RH-Q中文资料INTERSIL数据手册PDF规格书

描述 Description

The Intersil HS-65647RH is a fully asynchronous 8K x 8 radiation hardened static RAM. This RAM is fabricated using the Intersil 1.2 micron silicon-on-sapphire CMOS technology. This technology gives exceptional hardness to all types of radiation, including neutron fluence, total ionizing dose, high intensity ionizing dose rates, and cosmic rays.

特性 Features

• 1.2 Micron Radiation Hardened SOS CMOS

- Total Dose 3 x 105 RAD (Si)

- Transient Upset >1 x 1011 RAD (Si)/s

- Single Event Upset < 1 x 10-12 Errors/Bit-Day

• Latch-up Free

• LET Threshold >250 MEV/mg/cm2

• Low Standby Supply Current 10mA (Max)

• Low Operating Supply Current 100mA (2MHz)

• Fast Access Time 50ns (Max), 35ns (Typ)

• High Output Drive Capability

• Gated Input Buffers (Gated by E2)

• Six Transistor Memory Cell

• Fully Static Design

• Asynchronous Operation

• CMOS Inputs

• 5V Single Power Supply

• Military Temperature Range -55°C to +125°C

• Industry Standard JEDEC Pinout