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IRF830

PowerFieldEffectTransistor

TMOSPOWERFET4.5AMPERES500VOLTSRDS(on)=1.5Ω ThisTMOSPowerFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. •SiliconGateforFastSwitchingSpeeds •LowRDS(on)toMinimizeOn–Loss

ONSEMION Semiconductor

安森美半导体安森美半导体公司

IRF830

Drives1x70WHIDlamp

Overview TheIRPLHID2Areferencedesignkitconsistsofacompleteballastsolutionfora70WHIDlamp.ThedesigncontainsanEMIfilter,lowvoltagepowersupply,activepowerfactorcorrectionandaballastcontrolcircuitusingtheIRS2573D.Thisdemoboardisintendedtohelpwiththeevalua

IRF

International Rectifier

IRF830

HighPowerFactor/LowTHD

IRF

International Rectifier

IRF830

4.5A500VNCHANNELPOWERMOSFET

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.cconverters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. TheIRF830issuppliedin

FCIFirst Components International

戈采戈采企业股份有限公司

IRF830

PowerMOSFET

DESCRIPTION TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50W.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. FEATURES •Dynamic

KERSEMI

Kersemi Electronic Co., Ltd.

IRF830

NCHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

FEATURE NchannelinaplasticTO220package. Theyareintendedforuseinoff-lineswitchedmodepower supplies,T.V.andcomputermonitorpowersupplies. DC-DCconverters,motorcontrolcircuitsandgeneralpurpose switchingapplications CompliancetoRoHS.

COMSET

Comset Semiconductor

IRF830

4.4A,500V,1.5廓N-CHANNELPOWERMOSFET

DESCRIPTION ➤IRF830is500VHighvoltageN-Channelenhancement modepowerMOS-FETchipfabricatedinadvanced siliconepitaxialplanartechnology; ➤Advancedterminationschemetoprovideenhancedvoltageblockingcapability; ➤AvalancheEnergySpecified; ➤Source-to-DrainDiodeRecove

FS

First Silicon Co., Ltd

IRF830

N-ChannelPowerMOSFETs,4.5A,450V/500V

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRF830

N-ChannelPowerMOSFET

DESCRIPTION TheNellIRF830areN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.Theyaredesigned,testedandguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation. Theyaredesignedasanextremelyefficientandreliabledevice

NELLSEMINell Semiconductor Co., Ltd

尼尔半导体尼尔半导体股份有限公司

IRF830

N-ChannelPowerMESHMOSFET

DESCRIPTION ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAYTMprocess.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvaroussources. ●TypicalRDS(on)=1.35Ω ●EXTREMELYHIGHdv/dtCAPABILITY ●100AVALAN

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

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  • 型号:

    HS830-SERIES

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    Peripheral IC

供应商型号品牌批号封装库存备注价格
HUNTERSUN
2447
QFN
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
HUNTERSUN
24+
QFN
10000
全新原装现货库存
询价
HUNTERSUN
23+
QFN
50000
只做原装正品
询价
HunterSun
25+
QFN
4258
原装正品 价格优势
询价
DNA
7
公司现货,有挂就有货。
询价
HUNTERSUN
2109/1846/1846
SMD
897
全新、原装
询价
ARW
2405+
原厂封装
24000
只做原装优势现货库存 渠道可追溯
询价
ARW
2324+
24000
原装正品,超低价出售
询价
HUNTERSUN
1948+
QFN
6852
只做原装正品现货!或订货假一赔十!
询价
N/A
23+
80000
专注配单,只做原装进口现货
询价
更多HS830-SERIES供应商 更新时间2025-6-13 15:01:00