Silicon Schottky Barrier Diode for Rectifying

Features • Low forward voltage drop and suitable for high effifiency rectifying. • Ultra small Resin Package (URP) is suitable for high density surface mounting and high speed assembly.

文件：30.04 Kbytes 页数：6 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon Schottky Barrier Diode for Rectifying

Features • Low forward voltage drop and suitable for high efficiency rectifying. • Ultra small Resin Package (URP) is suitable for high density surface mounting and high speed assembly.

文件：72.79 Kbytes 页数：6 Pages

RENESAS

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Diodes>Switching

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瑞萨

Silicon Schottky Barrier Diode for Rectifying

Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK package is suitable for high density surface mounting and high speed assembly.

文件：32.45 Kbytes 页数：6 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon Schottky Barrier Diode for Rectifying

文件：70.84 Kbytes 页数：6 Pages

RENESAS

瑞萨

Silicon Schottky Barrier Diode

文件：35 Kbytes 页数：1 Pages

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