100V N-Channel Trench MOSFET

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SEMIHOW

Trench MOSFET

SemiHow

100V N-Channel Trench MOSFET

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SEMIHOW

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 82A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 15mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

MOS FIELD EFFECT TRANSISTOR

Description The NP82N10PUF is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance ⎯ RDS(on) = 15 mΩ MAX. (VGS = 10 V, ID = 41 A) • Low Ciss: Ciss = 2900 pF TYP. (VDS = 25 V, VGS = 0 V) • Designed for automotive a

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