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IRLML0030

30VN-ChannelEnhancementModeMOSFET

Description TheIRLML0030usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas4.5V.ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. GeneralFeatures VDS=30VID=4.2A RDS(ON)

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

IRLML0030

Lowerswitchinglosses

Features VDS(V)=30V RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

IRLML0030

MOSFET

Features VDS(V)=30V RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

IRLML0030PBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

IRLML0030PBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRLML0030TR

Lowerswitchinglosses

Features VDS(V)=30V RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

IRLML0030TR

MOSFET

Features VDS(V)=30V RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

IRLML0030TRPBF

HEXFETPowerMOSFET

ZPSEMIZP Semiconductor

至尚臻品

IRLML0030TRPBF

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

IRLML0030TRPBF

HEXFETPowerMOSFET

IRF

International Rectifier

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