丝印：HPN；Package：DSBGA(YFP)；LOW-POWER CONFIGURABLE MULTIPLE-FUNCTION GATE

1FEATURES • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 mA Max) • Low Dynamic-Power Consumption (Cpd = 4.8 pF Typ at 3.3 V) • Low Input Capacitance (CI = 1.5 pF Typ) • Low Noise – Overshoot and Undershoot

文件：2.061159 Mbytes 页数：38 Pages

TI

德州仪器

丝印：HPN；Package：DSBGA(YFP)；LOW-POWER CONFIGURABLE MULTIPLE-FUNCTION GATE

1FEATURES • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 mA Max) • Low Dynamic-Power Consumption (Cpd = 4.8 pF Typ at 3.3 V) • Low Input Capacitance (CI = 1.5 pF Typ) • Low Noise – Overshoot and Undershoot

文件：2.061159 Mbytes 页数：38 Pages

TI

德州仪器

丝印：HPN；Package：DSBGA(YZP)；LOW-POWER CONFIGURABLE MULTIPLE-FUNCTION GATE

1FEATURES • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 mA Max) • Low Dynamic-Power Consumption (Cpd = 4.8 pF Typ at 3.3 V) • Low Input Capacitance (CI = 1.5 pF Typ) • Low Noise – Overshoot and Undershoot

文件：2.061159 Mbytes 页数：38 Pages

TI

德州仪器

丝印：HPN；Package：DSBGA(YZP)；LOW-POWER CONFIGURABLE MULTIPLE-FUNCTION GATE

1FEATURES • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 mA Max) • Low Dynamic-Power Consumption (Cpd = 4.8 pF Typ at 3.3 V) • Low Input Capacitance (CI = 1.5 pF Typ) • Low Noise – Overshoot and Undershoot

文件：2.061159 Mbytes 页数：38 Pages

TI

德州仪器

NPN EPITAXIAL PLANAR TRANSISTOR

Description The HPN2222A is designed for general purpose amplifier and high speed, medium-power switching applications. Features • Low Collector Saturation Voltage • High Speed Switching • For Complementary Use with PNP Type HPN2907A Absolute Maximum Ratings • Maximum Temp

文件：42.83 Kbytes 页数：4 Pages

HSMC

华昕

NPN EPITAXIAL PLANAR TRANSISTOR

Description The HPN2369A is designed for general purpose switching and amplifier applications. Features • Low Collector Saturation Voltage • High Speed Switching Transistor

文件：39.48 Kbytes 页数：4 Pages

HSMC

华昕

PNP EPITAXIAL PLANAR TRANSISTOR

Description The HPN2907A is designed for general purpose amplifier and high speed, medium-power switching applications. Features • Low Collector Saturation voltage • High Speed Switching • For Complementary Use with NPN Type HPN2222A

文件：37.61 Kbytes 页数：4 Pages

HSMC

华昕

Beam Lead PIN Diode

Description The HPND-4005 planar beam lead PIN diode is constructed to offer exceptional lead strength while achieving excellent electrical performance at high frequencies. High beam strength offers users superior assembly yield, while extremely low capacitance allows high isolation to be realize

文件：127.15 Kbytes 页数：4 Pages

AVAGO

安华高

Beam Lead PIN Diode

Description The HPND-4005 planar beam lead PIN diode is constructed to offer exceptional lead strength while achieving excellent electrical performance at high frequencies. High beam strength offers users superior assembly yield, while extremely low capacitance allows high isolation to be realize

文件：40.63 Kbytes 页数：4 Pages

HP

安捷伦

Beam Lead PIN Diodes for Phased Arrays and Switches

Description The HPND-4028 and 4038 beam lead PIN diodes are designed for low capacitance, low resistance, and fast switching at microwave frequencies. These characteristics are achieved at low bias levels for minimal power consumption. Advanced processing techniques ensure uniform and consistent

文件：256.95 Kbytes 页数：6 Pages

AVAGO

安华高