NPN EPITAXIAL PLANAR TRANSISTOR

Description The HPN2369A is designed for general purpose switching and amplifier applications. Features • Low Collector Saturation Voltage • High Speed Switching Transistor

文件：39.48 Kbytes 页数：4 Pages

HSMC

华昕

NPN EPITAXIAL PLANAR TRANSISTOR

HSMC

华昕

Supports multiple fast charging input and output protocols such as PD3.1, supports 2 to 6 series battery cells, integrates buck-boost power MOS, and has a maximum charge and discharge power of 45W.

Features  Charge and Discharge Specifications  Built-in Buck-Boost NMOS  Maximum charge and discharge power: 45W  Adaptive charge current regulation  Battery type adjustable via external resistor. Fully charged voltage: 3.65V/4.1V/4.2V/4.3V/4.35V/4.4V  Number of series cells adjustable

文件：1.88152 Mbytes 页数：26 Pages

INJOINIC

英集芯科技

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-7.6A (VGS =±20V) ● RDS(ON)

文件：2.20127 Mbytes 页数：6 Pages

KEXIN

科信电子

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-7.6A (VGS =±20V) ● RDS(ON)

文件：2.25568 Mbytes 页数：6 Pages

KEXIN

科信电子