首页 >HPF451>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
VoltageVariableAttenuator | MINI Mini-Circuits | MINI | ||
VoltageVariableAttenuator | MINI Mini-Circuits | MINI | ||
1/2WATTMETAL | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
1/2WATTMETAL | NTE NTE Electronics | NTE | ||
GaAsDC-6GHzSP4TSwitch Description TheHWS451isaGaAsPHEMTMMICSP4TswitchoperatingatDC-6GHzinalowcostminiatureQFN12L(3x3mm)plasticlead(Pb)freepackage.TheHWS451featureslowinsertionlossandhighisolationwithverylowDCpowerconsumption.ThisswitchcanbeusedinWiMAXorIEEE802.11a/b/ | HWHexawave, Inc 汉威光电汉威光电股份有限公司 | HW | ||
N-CHANNELPOWERMOSFETS FEATURES •LowRds(on))athighvoltage •ImprovedInductiveruggedness •Excellenthighvoltagestability •Fastswitchingtimes •Ruggedpolysillcongatecellstructure •LowInputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability •TO-3package(Highv | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-CHANNEPOWERMOSFETS FEATURES •LowRds(on))athighvoltage •ImprovedInductiveruggedness •Excellenthighvoltagestability •Fastswitchingtimes •Ruggedpolysillcongatecellstructure •LowInputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability •TO-3package(Highv | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
N-CHANNELPOWERMOSFETS
| SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
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