52A, 30V, 0.019 Ohm, N-Channel Logic Level, Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as s • Logic Level Gate Drive\n• 52A†, 30V\n• Low On-Resistance, rDS(ON) = 0.019Ω\n• UIS Rating Curve\n• Related Literature\n   - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”;

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瑞萨

52A, 30V, 0.019 Ohm, N-Channel Logic Level, Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as s • Logic Level Gate Drive\n• 52A†, 30V\n• Low On-Resistance, rDS(ON) = 0.019Ω\n• UIS Rating Curve\n• Related Literature\n   - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”;

ONSEMI

安森美半导体

52A, 30V, 0.019 Ohm, N-Channel Logic Level, Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

文件：71.39 Kbytes 页数：6 Pages

INTERSIL

52A, 30V, 0.019 Ohm, N-Channel Logic Level, Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

文件：117.06 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

52A, 30V, 0.019 Ohm, N-Channel Logic Level, Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

文件：117.06 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体