HN58V66AT-10SRE中文资料瑞萨数据手册PDF规格书

描述 Description

Renesas Technology’s HN58V65A series and HN58V66A series are electrically erasable and programmable EEPROM’s organized as 8192-word × 8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster.

特性 Features

• Single supply: 2.7 to 5.5 V

• Access time:

- 100 ns (max) at 2.7 V ≤ VCC < 4.5 V

- 70 ns (max) at 4.5 V ≤ VCC ≤ 5.5 V

• Power dissipation:

- Active: 20 mW/MHz (typ)

- Standby: 110 µW (max)

• On-chip latches: address, data, CE, OE, WE

• Automatic byte write: 10 ms (max)

• Automatic page write (64 bytes): 10 ms (max)

• Ready/Busy

• Data polling and Toggle bit

• Data protection circuit on power on/off

• Conforms to JEDEC byte-wide standard

• Reliable CMOS with MNOS cell technology

• 105 erase/write cycles (in page mode)

• 10 years data retention

• Software data protection

• Write protection by RES pin (only the HN58V66A series)

• Operating temperature range:

- HN58V65AI/HN58V66AI Series: −40 to +85°C

- HN58V65A-SR/HN58V66A-SR Series: −20 to +85°C

• There are also lead free products.