HN58V66AP-10中文资料日立数据手册PDF规格书

描述 Description

The Hitachi HN58V65A series and HN58V66A series are a electrically erasable and programmable EEPROM’s organized as 8192-word × 8-bit. They have realized high speed, low power consumption and high relisbility by employing advanced MNOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster.

特性 Features

• Single supply: 2.7 to 5.5 V

• Access time:

- 100 ns (max) at 2.7 V ≤ VCC < 4.5 V

- 70 ns (max) at 4.5 V ≤ VCC ≤ 5.5 V

• Power dissipation:

- Active: 20 mW/MHz (typ)

- Standby: 110 µW (max)

• On-chip latches: address, data, CE, OE, WE

• Automatic byte write: 10 ms (max)

• Automatic page write (64 bytes): 10 ms (max)

• Ready/Busy

• Data polling and Toggle bit

• Data protection circuit on power on/off

• Conforms to JEDEC byte-wide standard

• Reliable CMOS with MNOS cell technology

• 105 erase/write cycles (in page mode)

• 10 years data retention

• Software data protection

• Write protection by RES pin (only the HN58V66A series)

• Industrial versions (Temperatur range: –20 to 85˚C and –40 to 85˚C) are also available.