64 k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A)

Description The Hitachi HN58V65A series and HN58V66A series are a electrically erasable and programmable EEPROM’s organized as 8192-word × 8-bit. They have realized high speed, low power consumption and high relisbility by employing advanced MNOS memory technology and CMOS process and circuitry t

文件：127.73 Kbytes 页数：27 Pages

HITACHIHitachi Semiconductor

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64k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) Wide Temperature Range version

Description Renesas Technology’s HN58V65A series and HN58V66A series are electrically erasable and programmable EEPROM’s organized as 8192-word × 8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and ci

文件：225.57 Kbytes 页数：28 Pages

RENESAS

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64k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) Wide Temperature Range version

Description Renesas Technology’s HN58V65A series and HN58V66A series are electrically erasable and programmable EEPROM’s organized as 8192-word × 8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and ci

文件：225.57 Kbytes 页数：28 Pages

RENESAS

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64 k EEPROM (8-kword 횞 8-bit) Ready/Busy Function, RES Function (HN58V66A)

文件：256.649 Kbytes 页数：28 Pages

RENESAS

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64 k EEPROM (8-kword 횞 8-bit) Ready/Busy Function, RES Function (HN58V66A)

文件：256.649 Kbytes 页数：28 Pages

RENESAS

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64 k EEPROM (8-kword × 8-bit) Ready/Busy Function, RES Function (HN58V66A)

Description\nRenesas Technology's HN58V65A series and HN58V66A series are a electrically erasable and programmable EEPROM’s organized as 8192-word × 8-bit. They have realized high speed, low power consumption and high relisbility by employing advanced MNOS memory technology and CMOS process and circ • Single supply: 2.7 to 5.5 V\n• Access time:\n - 100 ns (max) at 2.7 V ≤ VCC < 4.5 V\n - 70 ns (max) at 4.5 V ≤ VCC ≤ 5.5 V\n• Power dissipation:\n• Active: 20 mW/MHz (typ)\n• Standby: 110 µW (max)\n• On-chip latches: address, data, CE, OE, WE\n• Automatic byte write: 10 ms (max)\n• Automatic pag;

Renesas

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Memory-EEPROM

Renesas

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Memory-EEPROM

Renesas

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