256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)

Description The Hitachi HN58C256A and HN58C257A are electrically erasable and programmable ROMs organized as 32768-word × 8-bit. They have realized high speed low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology. They al

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HitachiHitachi Semiconductor

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256k EEPROM (32-kword × 8-bit) Ready/Busy and RES function (HN58C257A)

Description\nThe Hitachi HN58C256A and HN58C257A are electrically erasable and programmable ROMs organized as 32768-word × 8-bit. They have realized high speed low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology. They also • Single 5 V supply: 5 V ±10%\n• Access time: 85 ns/100 ns (max)\n• Power dissipation\n - Active: 20 mW/MHz, (typ)\n - Standby: 110 µW (max)\n• On-chip latches: address, data, CE, OE, WE\n• Automatic byte write: 10 ms max\n• Automatic page write (64 bytes): 10 ms max\n• Ready/Busy (only the HN;

HITACHI

日立

HIT
DIP-28

HIT

上传：深圳市宇创芯科技有限公司

SKHYNIX
BGA

SKHYNIX

上传：深圳市赛特兴科技有限公司

SKHYNIX
BGA

SKHYNIX

上传：深圳市赛特兴科技有限公司